Dr David Allen

BEng(Hons) PhD

Lecturer

Room C232, Carlow Campus
e: david.allen@setu.ie      t: 059 9175445
ORCID ID:0000-0002-0949-8816

 
  • Research Interests
  • Publications
  • Research Supervision
  • Engagement and Collaboration

Research Interests

Previous research interest using micro Raman Spectroscopy and White Beam Synchrotron X-Ray Topography to investigate strain fields in crystals.

Current research interests are in Enhanced Living using IoT including

  • Non-invasive blood glucose monitoring
  • Non tactile manipulation of sensors within the human body
  • Use of brain wave sensors to control devices

Publications

Peer Reviewed Journal Articles

ALLEN, D., WITTGE, J., STOPFORD, J., DANILEWSKY, A.N. and MCNALLY, P.J., 2011. Three-dimensional X-ray diffraction imaging of process-induced dislocation loops in silicon. Journal of Applied Crystallography, 44(3), pp. 526-531.

ALLEN, D., WITTGE, J., ZLOTOS, A., GOROSTEGUI-COLINAS, E., GARAGORRI, J., MCNALLY, P.J., DANILEWSKY, A.N. and ELIZALDE, M.R., 2010. Observation of nano-indent induced strain fields and dislocation generation in silicon wafers using micro-Raman spectroscopy and white beam X-ray topography. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 268(3), pp. 383-387.

DANILEWSKY, A.N., WITTGE, J., CROELL, A., ALLEN, D., MCNALLY, P.J., VAGOVIC, P., DOS SANTOS ROLO, T., LI, Z., BAUMBACH, T. and GOROSTEGUI-COLINAS, E., 2010. Dislocation dynamics and slip band formation in silicon: In-situ study by X-ray diffraction imaging. Journal of Crystal Growth, 318(1), pp. 1157-1163.

DANILEWSKY, A.N., WITTGE, J., HESS, A., CRÖLL, A., RACK, A., ALLEN, D., MCNALLY, P.J., DOS SANTOS ROLO, T., VAGOVIČ, P. and BAUMBACH, T., 2011. Real‐time X‐ray diffraction imaging for semiconductor wafer metrology and high temperature in situ experiments. Physica Status Solidi A, 208(11), pp. 2499-2504.

DANILEWSKY, A.N., WITTGE, J., KIEFL, K., ALLEN, D., MCNALLY, P.J., GARAGORRI, J., ELIZALDE, M.R., BAUMBACH, T. and TANNER, B.K., 2013. Crack Propogation and fracture in silicon wafers under thermal stress. Journal of Applied Crystallography, 46(4),.

DANILEWSKY, A.N., WITTGE, J., RACK, A., WEITKAMP, T., SIMON, R., BAUMBACH, T. and MCNALLY, P.J., 2008. White beam topography of 300 mm Si wafers. Journal of Materials Science: Materials in Electronics, 19(0), pp. 269-272.

GARAGORRI, J., GOROSTEGUI-COLINAS, E., ELIZALDE, M.R., ALLEN, D. and MCNALLY, P.J., 2010. NANOINDENTATION INDUCED SILICON FRACTURE AND 3D MODELLING. Anales de Mecánica de la Fractura, 2(27), pp. 559-564.

JAUSS, T., DANILEWSKY, A.N., WITTGE, J., CRÖLL, A., GARAGORRI, J., ELIZALDE, M.R., ALLEN, D. and MCNALLY, P.J., 2011. Influence of mechanical defects on the crystal lattice of silicon. Crystal Research and Technology, .

STOPFORD, J., ALLEN, D., ALDRIEN, O., MORSHED, M., WITTGE, J., DANILEWSKY, A.N. and MCNALLY, P.J., 2010. Combined Use of Three-Dimensional X-Ray Diffraction Imaging and Micro-Raman Spectroscopy for the Non-destructive Evaluation of Plasma Arc Induced Damage on Silicon Wafers. Microelectronic Engineering, 88, pp. 64-71.

STOPFORD, J., HENRY, A., ALLEN, D., BENNETT, N., MANESSIS, D., BOETTCHER, L., WITTGE, J., DANILEWSKY, A.N. and MCNALLY, P.J., 2012. Three Dimensionial Surface Modelling: A Novel Analysis Technique for Non-Destructive X-Ray Diffraction Imaging of Semiconductor Die Warpage & Strain in Fully Encapsulated Integrated Circuits. arXiv preprint arXiv:1204.1466, .

TANNER, B.K., ALLEN, D., WITTGE, J., DANILEWSKY, A.N., GARAGORRI, J., GOROSTEGUI-COLINAS, E., ELIZALDE, M.R. and MCNALLY, P.J., 2017. Quantitative Imaging of the Stress/Strain Fields and Generation of Macroscopic Cracks from Indents in Silicon. Crystals, 7(11), pp. 347.

TANNER, B.K., FOSSATI, M.C., GARAGORRI, J., ELIZALDE, M.R., ALLEN, D., MCNALLY, P.J., JACQUES, D., WITTGE, J. and DANILEWSKY, A.N., 2012a. Prediction of the propagation probability of individual cracks in brittle single crystal materials.

TANNER, B.K., FOSSATI, M.C., GARAGORRI, J., ELIZALDE, M.R., ALLEN, D., MCNALLY, P.J., JACQUES, D., WITTGE, J. and DANILEWSKY, A.N., 2012b. Prediction of the propagation probability of individual cracks in brittle single crystal materials. Applied Physics Letters, 101(4), pp. 041903-041903-4.

TANNER, B.K., WITTGE, J., ALLEN, D., FOSSATI, M.C., DANILEWSKY, A.N., MCNALLY, P.J., GARAGORRI, J., ELIZALDE, M.R. and JACQUES, D., 2011. Thermal slip sources at the extremity and bevel edge of silicon wafers. Journal of Applied Crystallography, 44(3), pp. 489-494.

TANNER, B.K., WITTGE, J., VAGOVIČ, P., BAUMBACH, T., ALLEN, D., MCNALLY, P.J., BYTHEWAY, R., JACQUES, D., FOSSATI, M.C. and BOWEN, D.K., 2013. X-ray diffraction imaging for predictive metrology of crack propagation in 450-mm diameter silicon wafers. Powder Diffraction, 28(2), pp. 1-5.

WITTGE, J., DANILEWSKY, A.N., ALLEN, D., MCNALLY, P.J., LI, Z., BAUMBACH, T., GOROSTEGUI-COLINAS, E., GARAGORRI, J., ELIZALDE, M.R., JACQUES, D., FOSSATI, M.C., BOWEN, D.K. and TANNER, B.K., 2010. Dislocation Sources and Slip Band Nucleation from Indents on Silicon Wafers. Journal of Applied Crystallography, 43(5), pp. 1036-1039.


Conference Presentations

WONG, C.S., BENNETT, N., ALLEN, D., DANILEWSKY, A.N. and MCNALLY, P.J., 2012. A Novel X-Ray Diffraction Technique for Analysis of Die Stress Inside Fully Encapsulated Packaged Chips, Electronic System-Integration Technology Conference , 17-20 Sept 2012, pp. 1-6.

 

Research Supervision

Zhixian Lu – M.Sc. – Non Invasive blood Glucose Measurement utilising Photoacoustic Detection

Paul Heatherington – M.Sc – Linear displacement electronic feedback for hydraulic cylinders

Jamie Edwards – M.Sc. – Microfluidic Analysis of Chemical Oxygen Demand

Areas of interest as a supervisor include
  • Internet of Things
  • Medical Electronics
  • Enhanced Living
  • Teaching and Learning

Engagement and Collaboration

I was involved with the Dynomed project where I designed a sensor suite to monitor the external influences that would disrupt sleeping patterns while measuring the output from a CPAP machine to aid sufferers of Sleep Apnea.